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| Transistor 2SC3130 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit: mm 2.8 -0.3 +0.2 s Features q q 0.650.15 +0.25 1.5 -0.05 0.650.15 0.95 q High transition frequency fT. Small collector output capacitance Cob and common base reverse transfer capacitance Crb. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.95 2.9 -0.05 1 1.90.2 +0.2 3 0.4 -0.05 +0.1 2 1.45 1.1 -0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 10 3 50 150 150 -55 ~ +150 Unit V V V mA mW C C 1:Base 2:Emitter 3:Collector JEDEC:TO-236 EIAJ:SC-59 Mini Type Package Marking symbol : 1S s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Base time constant Common emitter reverse transfer capacitance hFE ratio (Ta=25C) Symbol ICBO VCEO VEBO hFE fT Cob rbb' * CC Crb hFE * Conditions VCB = 10V, IE = 0 IC = 2mA, IB = 0 IE = 10A, IC = 0 VCE = 4V, IC = 5mA IC = 20mA, IB = 4mA VCB = 4V, IE = -5mA, f = 200MHz VCB = 4V, IE = 0, f = 1MHz VCB = 4V, IE = -5mA, f = 31.9MHz VCB = 4V, IE = 0, f = 1MHz VCE = 4V, IC = 100A VCE = 4V, IC = 5mA min typ 0 to 0.1 s Absolute Maximum Ratings (Ta=25C) 0.1 to 0.3 0.40.2 0.8 max 1 0.16 -0.06 +0.2 +0.1 Unit A V V 10 3 75 200 400 0.5 1.4 1.9 1.4 11 0.45 0.75 1.6 2.5 VCE(sat) V GHz pF ps pF *h FE Rank classification Rank hFE P 75 ~ 130 1SP Q 110 ~ 220 1SQ R 200 ~ 400 1SR Marking Symbol 1 Transistor PC -- Ta 200 80 TC=Ta 70 Ta=25C 50 2SC3130 IC -- VCE 60 VCE=4V 25C IC -- VBE Collector power dissipation PC (mW) Collector current IC (mA) 60 50 40 30 200A 20 100A 10 Collector current IC (mA) 160 Ta=75C 40 -25C 120 IB=500A 400A 300A 30 80 20 40 10 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 25C -25C Ta=75C IC/IB=10 360 hFE -- IC 4.0 VCE=4V fT -- I E VCB=4V Ta=25C Forward current transfer ratio hFE 300 Ta=75C 240 Transition frequency fT (GHz) 10 30 100 3.5 3.0 2.5 2.0 1.5 1.0 0.5 180 25C 120 -25C 60 0.3 1 3 10 30 100 0 0.1 0.3 1 3 0 - 0.1 - 0.3 -1 -3 -10 -30 -100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob -- VCB 1.6 Collector output capacitance Cob (pF) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1 3 10 IE=0 f=1MHz Ta=25C 30 100 Collector to base voltage VCB (V) 2 |
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